t4 - lds - 01 23, rev . 3 ( 11/18 /13 ) ?201 3 microsemi corporation page 1 of 7 jansr 2N7380 radiation hardened n- channel mosfet qualified per mil - prf - 19500/ 614 qualified levels : jansd, jansr and jansf qpl range and rad level radiation level jansd2N7380 jansr2N7380 jansf2N7380 to - 257 aa package tid 10 krad 100 krad 30 0 krad description these products are well suited for space level applications requiring total dose radiation (tid) tolerance and single event capability. th is 2n7381 is available in three qualified radiation levels and is packaged in a hermetic to - 257 outline. these products have all the same performance features of industry standard mosfets and may be used for most voltage control and fast switching applications. important: for the latest information, visit our website http://www.microsemi.com . features ? ease of paralleling ? hermetically sealed package ? low gate charge ? single event hardened for space applications ? rha level jans qualification s available per mil - prf - 19500/614. (see part nomenclature for all available options.) applications / benefits ? space level dc - dc converters ? satellite motor control circuit s ? synchronous rectification ? linear - mode applications maximum ratings @ t c = +25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business p ark, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit operating & storage junction temperature range t j & t stg - 55 to +150 c thermal resistance junction - to - case (see figure 4 ) r ? jc 1.67 o c/w total power dissipation @ t a = +25 c @ t c = +25 c (1) p t 2 75 w gate - source voltage, dc v gs 20 v drain current, dc @ t c = +25 oc (2) (3) i d1 14.4 a drain current, dc @ t c = +100 oc (2) (3) i d2 9.1 a off - state current (peak total value) (4 ) i dm 57.6 a source current i s 14.4 a notes: 1. derated linearly 0.6 w/oc for t c > +25 oc 2. the following formula derives the maximum theoretical i d limit. i d is limited by package and internal wires a nd may also be limited by pin diame ter: 3. see figure 3 for maximum drain current graphs 4. i dm = 4 x i d1 as calculated in note (2) downloaded from: http:///
t4 - lds - 01 23, rev . 3 ( 11/18 /13 ) ?201 3 microsemi corporation page 2 of 7 jansr 2N7380 mechanical and packaging ? case: nickel p lated c opper b ase & 1020 s teel f rame ? terminals: solder d ipped c opper c ored 5 2 a lloy plating ? marking: alpha n umeric ? polarity: see s chematic on last pag e ? we ight: approximately 3.43 grams ? see p ackage d imensions on last page. part nomenclature jansr 2n7 380 reliability level jansd = 10k rads (si) jansr = 100k rads (si) jansf = 300k rads (si) jedec type number symbols & definitions symbol definition di/dt rate of c hange of d iode c urrent while in reverse - recovery mode, recorded as maximum value. i d drain current, dc: the direct current into the drain terminal. i dss zero- gate - voltage drain current: the direct current into the gate terminal when the gate - source voltage is zero. i f forward current: the current flowing from the p - type region t o the n - type region. i gss reverse - gate current, drain short - circuited to source: the direct current into the gate terminal with a forward gate source voltage applied (i gssf ) or reverse gate source voltage applied (i gssf ) and the drain terminal short - cir cuited to the source terminal. i s source current, dc: the direct current into the source terminal. r ds(on) static drain - source on - state resistance: the dc resistance between the drain and source terminals with a specifie d gate - source voltage applied to bias the device to the on state. r g gate drive impedance or gate resistance v (br)dss drain - source breakdown voltage: gate short - circuited to the source terminal. v dd drain supply voltage, dc: the dc supply voltage applied to a circuit connected to the drain t erminal. v dg drain - gate voltage, dc: the dc voltage between the drain and gate terminals. v ds drain source voltage, dc: the dc voltage between the drain terminal and the source terminal. v gs gate source voltage, dc: the dc voltage between the gate terminal and the source terminal. downloaded from: http:///
t4 - lds - 01 23, rev . 3 ( 11/18 /13 ) ?201 3 microsemi corporation page 3 of 7 jansr 2N7380 electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit pre - irradiation character is tics drain - source breakdown voltage v gs = 0 v, i d = 1.0 m a v (br)dss 100 v gate - source voltage (threshold) v ds v gs , i d = 1 ma v ds v gs , i d = 1 ma, t j = +125c v ds v gs , i d = 1 ma, t j = - 55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125c i gss1 i gss2 100 200 na drain current v gs = 0 v, v ds = 80 v i dss1 25 a drain current v gs = 0 v, v ds = 80 v, t j = +125 c i dss2 0.25 ma static drain - source on - state resistance v gs = 1 2 v, i d = 9.1 a pulsed r ds(on)1 0.18 ? st atic drain - source on - state resistance v gs = 1 2 v, i d = 14.4 a pulsed r ds(on)2 0.20 ? static drain - source on - state resistance t j = +125c v gs = 1 2 v, i d = 9.1 a pulsed r ds(on)3 0.35 ? diode forward voltage v gs = 0 v, i d = 14.4 a pulsed v sd 1. 8 v dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = 1 2 v, i d = 14.4 a, v ds = 50 v q g(on) 40 nc gate to source charge v gs = 1 2 v, i d = 14.4 a, v ds = 50 v q gs 10 nc gate to drain charge v gs = 1 2 v, i d = 14.4 a, v ds = 50 v q gd 20 nc switching characteristics parameters / test conditions symbol min. max. unit turn - on delay time i d = 14.4 a , v gs = 12 v, r g = 7. 5 ? , v dd = 50 v t d(on) 25 ns ri se time i d = 14.4 a, v gs = 12 v, r g = 7. 5 ? , v dd = 50 v t r 60 ns turn - off delay time i d = 14.4 a, v gs = 12 v, r g = 7. 5 ? , v dd = 50 v t d(off) 40 ns fall time i d = 14.4 a, v gs = 12 v, r g = 7. 5 ? , v dd = 50 v t f 30 ns diode reverse recovery time di/dt 100 a/s, v dd 5 0 v, i f = 14.4 a t rr 275 ns downloaded from: http:///
t4 - lds - 01 23, rev . 3 ( 11/18 /13 ) ?201 3 microsemi corporation page 4 of 7 jansr 2N7380 electrical characteristics @ t a = +25 c, unless otherwise noted (continued) post - irradiation (1) parameters / test conditions symbol min. max. unit drain - source breakdown voltage v gs = 0 v, i d = 1 ma v (br)dss 100 v gate - source voltage (threshold) v ds v gs , i d = 1.0 ma jans d, r v ds v gs , i d = 1.0 ma jansf v gs(th)1 v gs(th)1 2.0 1.25 4.0 4.5 v gate current v gs = 20 v, v ds = 0 v i gss1 100 na drain current v gs = 0 v, v ds = 80% of v ds (pre - irradiated) jans d, r v gs = 0 v, v ds = 80% of v ds (pre - irradiated) jansf i dss1 25 50 a static drain - source on - state voltage v gs = 12 v, i d = 9.1 pulsed jans d, r v gs = 12 v, i d = 9.1 pulsed jansf r ds(on) 1.638 2.184 v diode forward voltage v gs = 0 v, i d = 14.4 pulsed v sd 1.8 v note: 1. post - irradiation electrical characteristics apply to devices subjected to s teady s tate t otal d ose i rradiation testing in accordance with mil - std - 750, method 1019. separate samples are tested for v gs bias (12v), and v ds bias (80v ) c onditions. safe operating area v ds , drain - to - source voltage (v) figure 1 i d drain - to - source current (a) downloaded from: http:///
t4 - lds - 01 23, rev . 3 ( 11/18 /13 ) ?201 3 microsemi corporation page 5 of 7 jansr 2N7380 graphs see (single event effect) typical response: heavy ion testing of the 2n 7380 device was completed by similarity of die structure to the 2n7261. the 2n7261 has been characterized at the texas a&m cyclotron. the following s ee curve has been established using the elements, let, range, and total energy conditions as shown: v gs , gate source voltage , v it should be noted that total energy levels are considered to be a factor in see characteriz ation. comparisons to other datasets should not be based on let alone. please consult factory for more information. v ds , drain source voltage , v figure 2 downloaded from: http:///
t4 - lds - 01 23, rev . 3 ( 11/18 /13 ) ?201 3 microsemi corporation page 6 of 7 jansr 2N7380 graphs t c case temperature (c) figure 3 maximum drain current vs case temperature t1, rectangular pulse duration (sec) figure 4 thermal impedance curves i d drain current (amperes) thermal impedance z jc downloaded from: http:///
t4 - lds - 01 23, rev . 3 ( 11/18 /13 ) ?201 3 microsemi corporation page 7 of 7 jansr 2N7380 package dimensions note s: 1. dimensions are in inches. 2. millimeter equivalents are given for information only. 3. g lass meniscus included in dimension tl and bl. schematic dimensions ltr inch millimeters min max min max bl 0.410 0.430 10.41 10.92 ch 0.190 0.200 4.83 5.08 ld 0.025 0.035 0.64 0.89 ll 0.505 0.595 12.82 15.11 lo 0.120 bsc 3.05 bsc ls 0.100 bsc 2.54 bsc mhd 0.140 0.150 3.56 3.81 mho 0.5 27 0.537 13.39 13.64 tl 0.645 0.665 16.38 16.89 tt 0.035 0.045 0.89 1.14 tw 0.410 0.420 10.41 10.67 term 1 drain term 2 source term 3 gate downloaded from: http:///
|
